sbn13002 copyright@semiwell semiconductor co., ltd., all rig hts are reserved semiwell semiconductor to-92 absolute maximum ratings (t j = 25 unless otherwise specified) symbol parameter ratings units v cbo collector-base voltage(v be =0 ) 700 v v ceo collector-emitter voltage(i b =0 ) 450 v v ebo emitter-base voltage(i c =0 ) 9 v i c collector current 0.2 a p c total dissipation at t c = 25 0.6 w t j operation junction temperature - 40 ~ 150 t stg storage temperature - 40 ~ 150 high voltage fast-switching npn power transistor features high voltage high speed switching general description this device is designed high voltage and high speed switching characteristic required to lighting syste m, switching regulator and inverter motor controls. oct 2008. rev. 1 1/3
sbn13002 electrical characteristics ( tc = 25 unless otherwise noted) symbol items conditions ratings unit min typ. max bv ceo collector-emitter voltage ic=5ma, ib=0 450 v bv cbo collector-base voltage ic=500ua, ie=0 700 v v ce(sat) collect-emitter saturation voltage ic=0.05a, ib=0.01a ic=0.1a, ib=0.02a 0.45 1.0 v v be(sat) base-emitter saturation voltage ic=0.05a, ib=0.01a ic=0.1a, ib=0.01a 0.9 1.0 v h fe dc current gane vce = 10v, ic = 100ma vce = 10v, ic = 280ma 13 5 26 t stg storage time v cc = 5v, i c = 0.5 1 3 ? tf fall time v cc = 5v, i c = 0.5 0.8 ? hfe sorting condition : v ce = 10v, ic = 100ma grade SBN13002-1 sbn13002-2 hfe 13 ~ 20 18 ~ 26 electrical characteristics curve fig. 1 dc current gain fig. 2 saturation voltage 2/3
sbn13002 to-92 package dimension dim. mm inch min. typ. max. min. typ. max. a 4.2 0.165 b 3.7 0.146 c 4.43 4.83 0.174 0.190 d 14.07 14.87 0.554 0.585 e 0.4 0.016 f 4.43 4.83 0.174 0.19 g 0.45 0.017 h 2.54 0.100 i 2.54 0.100 j 0.33 0.48 0.013 0.019 a b e f c d g h i j cathode gate anode 3/3
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